CapeSym develops novel processing techniques for production of high quality materials for sensors and detectors, including detached growth of cadmium zinc telluride (CZT) and growth of high purity silicon carbide (SiC) crystals.


Detached Growth of II-VI Crystals

In the detached growth process, the deleterious interaction of the growing crystal and the ampoule wall is eliminated by maintaining a small meniscus between the ampoule wall and the growing crystal.  Detached growth is maintained by actively balancing the pressure below the meniscus against the hydrostatic head of the melt column.

Crystals grown by the detached method have significantly better material properties. A telling effect of the influence of attachment was observed in detached and partially-detached growth of Ge in NASA, as shown below.

CapeSym has developed a fully automated feedback-controlled system for detached crystal growth, producing detached Ge and CZT crystals with extremely low structural defects.

Silicon Carbide Furnaces
Detached Growth Benefits

High Purity Silicon Carbide Crystal Growth

SiC is the material of choice for next generation power switching devices. CapeSym has developed a patented process for growth of high purity SiC. This High Temperature Chemical Vapor Deposition (HTCVD) process produces undoped, semi-insulating crystals (resistivity ~10^6 ohm-cm) at extremely fast growth rates.


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